Magnetic memory devices having multiple magnetic layers therein
AssigneeSamsung Electronics Co., Ltd.
InventorsSung Chul Lee, Ung Hwan Pi
Life of this patent
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Abstract
A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.
Claims20
A magnetic memory device, comprising:
- a first magnetic layer extending in a first direction, the first magnetic layer including a first region having magnetic moments oriented in a first rotational direction along the first direction;
- a second magnetic layer on the first magnetic layer and extending in the first direction, the second magnetic layer including a second region having magnetic moments oriented in a second rotational direction along the first direction, the second rotational direction is opposite to the first rotational direction;
- a conductive layer, which extends in the first direction between the first magnetic layer and the second magnetic layer and is configured to support current flow in the first direction between the first and second magnetic layers, from a first end of the conductive layer to a second end of the conductive layer;
- an upper magnetic layer on the second magnetic layer, the upper magnetic layer having a magnetization direction fixed in one direction;
- and
- a tunnel barrier pattern between the upper magnetic layer and the second magnetic layer.
A magnetic memory device, comprising:
- a first magnetic layer extending in a first direction, the first magnetic layer including a first region having magnetic moments oriented in a first rotational direction along the first direction;
- a second magnetic layer on the first magnetic layer and extending in the first direction, the second magnetic layer including a second region having magnetic moments oriented in a second rotational direction along the first direction, the second rotational direction is opposite to the first rotational direction;
- a conductive layer, which extends in the first direction between the first magnetic layer and the second magnetic layer and is configured to support current flow in the first direction between the first and second magnetic layers;
- and
- a read/write element on the second magnetic layer,
- wherein a Dzyaloshinskii-Moriya Interaction constant at an interface between the first magnetic layer and the conductive layer and at an interface between the second magnetic layer and the conductive layer is at least four times a value of an exchange coupling constant between the first magnetic layer and the second magnetic layer.
Dependencies are inferred from the claim text.