Magnetic-domain-wall-displacement memory cell and initializing method therefor

A magnetic wall displacement type memory cell, comprising a recording layer comprising a magnetic film,

• the recording layer comprising:
• a magnetization reversal region in which magnetization is reversible;
• and
• at least two magnetization fixed regions that supply a spin-polarized electron to the magnetization reversal region,
• wherein the magnetic wall displacement type memory cell is configured so that:
• magnetization reversal in a first direction is induced into a third region due to a second current flowing in a direction parallel to a film surface of the magnetic film and a second magnetic field component in the direction parallel to the film surface of the magnetic film;
• and
• magnetization reversal in a second direction that is antiparallel to the first direction is induced into a fourth region due to a third current flowing in the direction parallel to the film surface of the magnetic film and a third magnetic field component in the direction parallel to the film surface of the magnetic film.