G02F 1/13613

The semiconductor element being formed on a first substrate and thereafter transferred

Official title: {the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate}

G02F1/13613 (The semiconductor element being formed on a first substrate and thereafter transferred) appears on 209 US grants and 181 published applications in this corpus.

Search patents in G02F
Granted patents
209
Published applications
181
Assignees
65
Inventors
268
Latest grant
2 Jun 2026

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G02F 1/13613: granted patents and published applications per publication year
YearGranted patentsPublished applications
199350
199480
199520
199690
199760
1998110
199920
200060
200134
200255
20031017
2004815
2005914
20061114
20071318
200886
2009614
20101011
2011149
2012810
2013152
201455
201555
201635
201776
201836
201961
202042
202100
202212
202324
202423
202512
202611

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