B01J 2203/067
Aluminium nitrides
B01J2203/067 (Aluminium nitrides) appears on 10 US grants and 12 published applications in this corpus.
Search patents in B01J- Granted patents
- 10
- Published applications
- 12
- Assignees
- 8
- Inventors
- 27
- Latest grant
- 19 Feb 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 2 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 1 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 2 | 1 |
| 2013 | 0 | 1 |
| 2014 | 2 | 0 |
| 2015 | 2 | 1 |
| 2016 | 1 | 0 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Polycrystalline compacts, earth-boring tools including such compacts, and methods of fabricating polycrystalline compacts19 Feb 2019US 10,208,542 B2Baker Hughes Incorporated
- Polycrystalline compacts, earth-boring tools including such compacts, and methods of fabricating polycrystalline compacts22 Nov 2016US 9,498,867 B2Baker Hughes Incorporated
- High pressure apparatus and method for nitride crystal growth13 Oct 2015US 9,157,167 B1Soraa, Inc.
- High pressure apparatus and method for nitride crystal growth24 Mar 2015US 8,986,447 B2Soraa, Inc.
- Method for hot isostatic pressing a substrate30 Dec 2014US 8,920,706 B2Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
- Polycrystalline compacts, earth-boring tools including such compacts, and methods of fabricating polycrystalline compacts9 Feb 2017US 2017/0037688 A1Baker Hughes Incorporated
- Polycrystalline compacts, earth-boring tools including such compacts, and methods of fabricating polycrystalline compacts28 May 2015US 2015/0144407 A1Baker Hughes Incorporated
- Method for Hot Isostatic Pressing a Substrate7 Feb 2013US 2013/0032965 A1Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
- High Pressure Apparatus and Method for Nitride Crystal Growth17 May 2012US 2012/0118223 A1Soraa, Inc.
- High Pressure Apparatus and Method for Nitride Crystal Growth28 Jul 2011US 2011/0183498 A1Soraa, Inc.
Most cited
By later US patents
- Method for reducing defect concentrations in crystals82US 7,175,704 B2Diamond Innovations, Inc. · 2007
- Process for the synthesis of diamond78US 6,129,900 ASumitomo Electric Industries, Ltd. · 2000
- High pressure apparatus and method for nitride crystal growth65US 8,097,081 B2Soraa, Inc. · 2012
- High pressure apparatus and method for nitride crystal growth4US 8,871,024 B2Soraa, Inc. · 2014
- High pressure apparatus and method for nitride crystal growth3US 9,157,167 B1Soraa, Inc. · 2015