High pressure apparatus and method for nitride crystal growth
AssigneeSoraa, Inc.
InventorsRajeev T. Pakalapati, Mark P. D'Evelyn
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AssigneeSoraa, Inc.
InventorsRajeev T. Pakalapati, Mark P. D'Evelyn
Estimating the term…
A high pressure apparatus and related methods for processing supercritical fluids are disclosed. In certain embodiments, the present apparatus includes a capsule, a heater, at least one ceramic ring or multiple rings, optionally, with one or more scribe marks and/or cracks present. In certain embodiments, the apparatus has a metal sleeve containing each ceramic ring. The apparatus also has a high strength enclosure, end flanges with associated insulation, and a power control system. In certain embodiments, a high pressure apparatus is constructed such that the diametric annular gap between the outer diameter of the heater and the ceramic ring is selected to provide radial load-bearing contact above a particular temperature and pressure. In certain embodiments, the apparatus is capable of accessing pressures of 0.2 GPa to 2 GPa and temperatures of 400° C. to 1200° C.
An apparatus for high pressure material processing comprising:
A method of crystal growth, the method comprising:
A method of crystal growth, the method comprising:
An apparatus for high pressure material processing comprising:
Dependencies are inferred from the claim text.