Nexcis
Rousset, FR· latest recorded location
NEXCIS is named on 5 US grants and 7 published applications in this corpus. Its most frequent classification is H10F (Solar cells and light sensors).
- Granted patents
- 5
- Published applications
- 7
- Inventors
- 22
- Granted in 2026 so far
- 0
- Most recent grant
- 9 May 2017
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2012 | 0 | 1 |
| 2013 | 0 | 2 |
| 2014 | 1 | 1 |
| 2015 | 1 | 2 |
| 2016 | 2 | 1 |
| 2017 | 1 | 0 |
By publication year.
Technology areas
Share of 12 documents
- H10FSolar cells and light sensors10
- Y02EClean energy generation and storage10
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered5
- Y02PLow-carbon manufacturing3
- G01BMeasuring length, thickness or similar linear dimensions2
- G01NInvestigating or analysing materials by determining their chemical or physical properties2
- C25DProcesses for the electrolytic or electrophoretic production of coatings1
- F27BFurnaces, kilns, ovens or retorts in general1
- F27DDetails or accessories of furnaces, kilns, ovens or retorts, in so far1
Recent patents
- Checking the stoichiometry of I-III-VI layers for use in photovoltaic using improved electrolysis conditions9 May 2017US 9,647,151 B2
- Interface between a I/III/VI2 layer and a back contact layer in a photovoltaic cell25 Oct 2016US 9,478,695 B2
- Photoreflectance device28 Jun 2016US 9,377,300 B2
- Laser etching a stack of thin layers for a connection of a photovoltaic cell18 Aug 2015US 9,112,099 B2
- Production of thin films having photovoltaic properties, comprising depositing an alternate I/III or III/I multi-layer structure and annealing said structure11 Nov 2014US 8,883,547 B2
- Formation of a i-iii-vi2 semiconductor layer by heat treatment and chalcogenization of an i-iii metallic precursor17 Mar 2016US 2016/0079454 A1
- Photoreflectance device26 Nov 2015US 2015/0338212 A1
- Laser etching a stack of thin layers for a connection of a photovoltaic cell26 Mar 2015US 2015/0087103 A1
- Interface between a i/iii/vi2 layer and a back contact layer in a photovoltaic cell23 Oct 2014US 2014/0315346 A1
- Interface between a i-iii-vi2 material layer and a molybdenum substrate17 Oct 2013US 2013/0269780 A1
Most cited
By later US patents