Lucas NovaSensor
Fremont, CA, US· latest recorded location
Lucas NovaSensor is named on 7 US grants and 0 published applications in this corpus. Its most frequent classification is G01L (Measuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure).
- Granted patents
- 7
- Published applications
- 0
- Inventors
- 13
- Granted in 2026 so far
- 0
- Most recent grant
- 13 Nov 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 0 |
By publication year.
Technology areas
Share of 7 documents
- G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure5
- G01PMeasuring linear or angular speed, acceleration, deceleration, or shock3
- Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2
- H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by1
Recent patents
- Single crystal silicon sensor with high aspect ratio and curvilinear structures13 Nov 2001US 6,316,796 B1
- Method of producing a buried boss diaphragm structure in silicon31 Oct 2000US 6,140,143 A
- Single crystal silicon sensor with high aspect ratio and curvilinear structures4 Jul 2000US 6,084,257 A
- Miniature gauge pressure sensor using silicon fusion bonding and back etching21 Mar 2000US 6,038,928 A
- Pressure sensor isolated within housing having integral diaphragm and method of making same31 Oct 1995US 5,461,922 A
No published applications.
Most cited
By later US patents
- Method and apparatus for thermally actuated self testing of silicon structures79US 5,355,712 A1994
- Miniature gauge pressure sensor using silicon fusion bonding and back etching55US 6,038,928 A2000
- Semiconductor sensor with piezoresistors and improved electrostatic structures54US 5,231,301 A1993
- Pressure sensor isolated within housing having integral diaphragm and method of making same47US 5,461,922 A1995
- Single crystal silicon sensor with high aspect ratio and curvilinear structures21US 6,084,257 A2000