Single crystal silicon sensor with high aspect ratio and curvilinear structures
AssigneeLucas NovaSensor
InventorsKurt E. Petersen, Nadim Maluf, Wendell McCulley, John Logan, Erno Klaasen, Jan Mark Noworolski
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Abstract
In one aspect, the invention provides a semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.
Claims54
A semiconductor micromechanical device comprising:
- a first single crystal silicon wafer layer;
- a single crystal silicon structure formed in said first wafer layer and including two oppositely disposed substantially vertical major surfaces and including two oppositely disposed generally horizontal minor surfaces wherein the aspect ratio of major surface to minor surface is at least 5:1;
- and
- a carrier including a recessed region, wherein said carrier is secured to said first wafer layer such that said structure is suspended opposite the recessed region.
A semiconductor micromechanical device comprising:
- a first single crystal silicon wafer layer;
- a plurality of single crystal silicon plates formed in said first wafer layer and having an aspect ratio of at least 10:1;
- and
- a second single crystal wafer layer secured to said first wafer layer such that said plates are suspended over the second wafer layer.
A semiconductor micromechanical device comprising:
- a first single crystal silicon wafer layer;
- a plurality of single crystal silicon beams formed in said first wafer layer and having an aspect ratio of at least 10:1;
- and
- a second single crystal wafer layer secured to said first wafer layer such that said beams are suspended over the second wafer layer.
A semiconductor micromechanical device produced by the steps of:
- providing a first single crystal silicon wafer layer;
- providing a carrier including a recessed region;
- bonding the first wafer layer to the carrier with the recessed region facing the first wafer layer;
- and
- etching substantially vertically through the first wafer layer opposite the recessed region so as to form a beam integral with the first wafer layer and suspended over the recessed region wherein the beam has an aspect ratio of height to width of at least 5:1.
A semiconductor micromechanical device produced by the steps of:
- providing a first single crystal silicon wafer layer;
- providing a carrier including a recessed region;
- fusion bonding the first wafer layer to the carrier with the recessed region facing the first wafer layer;
- and
- etching substantially vertically through the first wafer layer opposite the recessed region so as to form a plate integral with the first wafer layer and suspended over the recessed region wherein the plate has an aspect ratio of height to width of at least 5:1.
A semiconductor micromechanical device comprising:
- a single crystal silicon substrate;
- a single crystal silicon structure formed in said substrate and including two oppositely disposed substantially vertical major surfaces and including two oppositely disposed generally horizontal minor surfaces wherein the aspect ratio of major surface to minor surface is at least 5:1;
- and
- a generally planar surface over which said structure is suspended.
Dependencies are inferred from the claim text.