Single crystal silicon sensor with high aspect ratio and curvilinear structures
AssigneeLucas NovaSensor
InventorsKurt E. Petersen, Nadim Maluf, Wendell McCulley, John Logan, Erno Klaasen, Jan M. Noworolski
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Abstract
In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.
Claims39
A semiconductor transducer comprising:
- a first single crystal silicon wafer layer;
- a curvilinear single crystal silicon beam formed in said first wafer layer and including two generally opposite facing first substantially vertical surfaces and two generally opposite facing first generally horizontal surfaces;
- and
- a second single crystal silicon wafer layer including a recessed region wherein said second wafer layer is secured to said first wafer layer such that said curvilinear beam is suspended opposite the recessed region.
A semiconductor transducer produced by:
- providing a first single crystal silicon wafer layer;
- providing a carrier including a recessed region;
- bonding the first wafer layer to the carrier with the recessed region facing the first wafer layer;
- and
- etching substantially vertically through the first wafer layer opposite the recessed region in a curvilinear pattern so as to form a curvilinear beam structure integral with the first wafer layer and suspended over the recessed region.
A semiconductor transducer comprising:
- a first single crystal silicon wafer layer;
- a curvilinear single crystal silicon beam structure formed in said first wafer layer and secured at one end thereof to said first wafer layer and including a plurality of vertical plates formed in the other end thereof wherein the curvilinear beam structure includes two generally opposite facing first substantially vertical surfaces and two generally opposite facing first generally horizontal surfaces;
- and
- a second single crystal wafer layer including a recessed region wherein said second wafer layer is secured to said first wafer layer such that said curvilinear beam structure is suspended opposite the recessed region.
A semiconductor transducer comprising:
- a single crystal silicon substrate;
- a curvilinear single crystal silicon structure formed in said substrate and including two generally oppositely disposed substantially vertical surfaces and two oppositely disposed generally horizontal surfaces;
- and
- a generally planar surface over which said structure is suspended.
Dependencies are inferred from the claim text.