Hexatech, Inc.
Morrisville, NC, US· latest recorded location
Hexatech, Inc. is named on 7 US grants and 7 published applications in this corpus. Its most frequent classification is H10H (Inorganic light-emitting semiconductor devices having potential barriers).
- Granted patents
- 7
- Published applications
- 7
- Inventors
- 15
- Granted in 2026 so far
- 0
- Most recent grant
- 12 Dec 2017
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2014 | 1 | 2 |
| 2015 | 1 | 2 |
| 2016 | 2 | 1 |
| 2017 | 3 | 0 |
| 2018 | 0 | 1 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 1 |
By publication year.
Technology areas
Share of 14 documents
- H10HInorganic light-emitting semiconductor devices having potential barriers8
- C01BNon-metallic elements5
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered5
- Y10TTechnical subjects covered by former us classification5
- C04BLime, magnesia4
- C30BSingle-crystal growth4
- H10DInorganic electric semiconductor devices3
- C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds2
Recent patents
- Highly transparent aluminum nitride single crystalline layers and devices made therefrom12 Dec 2017US 9,840,790 B2
- Power semiconductor devices incorporating single crystalline aluminum nitride substrate29 Aug 2017US 9,748,409 B2
- Optoelectronic devices incorporating single crystalline aluminum nitride substrate13 Jun 2017US 9,680,062 B2
- Polycrystalline aluminum nitride material and method of production thereof26 Apr 2016US 9,321,647 B2
- Optoelectronic devices incorporating single crystalline aluminum nitride substrate29 Mar 2016US 9,299,883 B2
- Single crystalline aluminum nitride substrate and optoelectronic devices made therefrom3 Oct 2024US 2024/0328030 A1
- Power semiconductor devices incorporating single crystalline aluminum nitride substrate25 Jan 2018US 2018/0026144 A1
- Optoelectronic devices incorporating single crystalline aluminum nitride substrate23 Jun 2016US 2016/0181474 A1
- Highly transparent aluminum nitride single crystalline layers and devices made therefrom3 Sep 2015US 2015/0247260 A1
- Polycrystalline aluminum nitride material and method of production thereof4 Jun 2015US 2015/0151968 A1
Most cited
By later US patents