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US 9,748,409 B2Granted
Power semiconductor devices incorporating single crystalline aluminum nitride substrate
AssigneeHexatech, Inc.
InventorsBaxter Moody, Seiji Mita, Jinqiao Xie
Life of this patent
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Abstract
The invention provides a power semiconductor device including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm−2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and a power semiconductor structure comprising at least one doped AlxGa1−xN layer overlying the aluminum nitride single crystalline substrate.
Claims16
A power semiconductor device, comprising:
- an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm−2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec;
- and
- a power semiconductor structure comprising a plurality of epitaxial doped AlxGa1−xN layers overlying the aluminum nitride single crystalline substrate, wherein the dislocation density of each epitaxial layer is substantially the same as the dislocation density of the substrate;
- wherein the power semiconductor device is characterized by a breakdown field of at least about 5 MV/cm.
1 more element
A method of forming a power semiconductor device, comprising:
- receiving an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm−2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec;
- depositing a plurality of epitaxial doped AlxGa1−N active layers on the aluminum nitride single crystalline substrate, wherein the dislocation density of each epitaxial layer is substantially the same as the dislocation density of the substrate;
- and
- forming metal electrode layers in contact with the doped AlxGa1−N active layers,
- wherein the power semiconductor device is characterized by a breakdown field of at least about 5 MV/cm.
2 more elements
Dependencies are inferred from the claim text.