Y10T 428/1114
Having tunnel junction effect
Official title: having tunnel junction effect
Y10T428/1114 (Having tunnel junction effect) appears on 207 US grants and 210 published applications in this corpus.
Search patents in Y10T- Granted patents
- 207
- Published applications
- 210
- Assignees
- 72
- Inventors
- 357
- Latest grant
- 6 Feb 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 3 | 0 |
| 2001 | 4 | 1 |
| 2002 | 6 | 9 |
| 2003 | 2 | 6 |
| 2004 | 8 | 9 |
| 2005 | 6 | 14 |
| 2006 | 5 | 11 |
| 2007 | 14 | 10 |
| 2008 | 7 | 15 |
| 2009 | 12 | 15 |
| 2010 | 11 | 27 |
| 2011 | 19 | 21 |
| 2012 | 24 | 20 |
| 2013 | 19 | 16 |
| 2014 | 26 | 17 |
| 2015 | 19 | 8 |
| 2016 | 7 | 3 |
| 2017 | 5 | 2 |
| 2018 | 2 | 1 |
| 2019 | 1 | 3 |
| 2020 | 1 | 0 |
| 2021 | 2 | 2 |
| 2022 | 1 | 0 |
| 2023 | 1 | 0 |
| 2024 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Magnetoresistive sensor and fabrication method for a magnetoresistive sensor6 Feb 2024US 11,892,526 B2Infineon Technologies AG
- Memory system having thermally stable perpendicular magneto tunnel junction (MTJ) and a method of manufacturing same13 Jun 2023US 11,678,586 B2Avalanche Technology, Inc.
- Electronic switching element6 Dec 2022US 11,522,141 B2Merck Patent GmbH
- Magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering26 Oct 2021US 11,156,678 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Electronic switching element13 Jul 2021US 11,063,227 B2Merck Patent GmbH
- Magnetoresistive sensor and fabrication method for a magnetoresistive sensor2 Dec 2021US 2021/0373094 A1Infineon Technologies AG
- Electronic switching element23 Sep 2021US 2021/0292651 A1Merck Patent GmbH
- Electronic switching element10 Oct 2019US 2019/0312216 A1Merck Patent GmbH
- Magnetic Field Sensor Using In Situ Solid Source Graphene and Graphene Induced Anti-Ferromagnetic Coupling and Spin Filtering29 Aug 2019US 2019/0265312 A1The Government of the United States of America, as represented by the Secretary of the Navy
- Memory system having thermally stable perpendicular magneto tunnel junction (mtj) and a method of manufacturing same16 May 2019US 2019/0148622 A9Avalanche Technology, Inc.
Most cited
By later US patents
- Method and system for providing a magnetoresistive structure164US 8,545,999 B1Western Digital (Fremont), LLC · 2013
- Method and system for fabricating magnetic transducers with improved pinning152US 8,164,864 B2Western Digital (Fremont), LLC · 2012
- Method for defining a magnetoresistive junction using multiple mills at a plurality of angles147US 8,416,540 B1Western Digital (Fremont), LLC · 2013
- Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications93US 8,064,244 B2Kabushiki Kaisha Toshiba · 2011
- Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer93US 8,852,760 B2Headway Technologies, Inc. · 2014