Magnetic Field Sensor Using In Situ Solid Source Graphene and Graphene Induced Anti-Ferromagnetic Coupling and Spin Filtering
AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy
InventorsOlaf M. J. van 't Erve, Enrique Cobas, Shu-Fan Cheng, Berend T. Jonker
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Abstract
A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.
Claims12
A magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering, comprising:
- a substrate comprising silicon wafers and thermal oxide;
- an amorphous carbon layer on the substrate grown by sputtering;
- a first ferromagnetic metal surface grown in situ by sputtering on the amorphous carbon layer;
- a graphene film grown by annealing in situ on the first ferromagnetic metal surface;
- a second ferromagnetic film on the graphene film;
- and
- a capping layer on the second ferromagnetic film.
A magnetic field sensor formed by using in situ solid source graphene and using graphene induced anti-ferromagnetic coupling and spin filtering formed from the steps comprising:
- providing a substrate comprising silicon wafers and thermal oxide;
- performing DC magnetron sputtering to the substrate comprising silicon wafers and thermal oxide;
- back-sputtering the substrate;
- growing amorphous carbon on the substrate;
- sputtering and growing a first ferromagnetic metal surface on the amorphous carbon;
- annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface;
- forming a graphene film on the first ferromagnetic metal surface;
- wherein the first ferromagnetic metal surface comprises NiFe;
- sputtering and growing a second ferromagnetic film on the graphene film;
- and
- capping the second ferromagnetic film with a platinum layer.
Dependencies are inferred from the claim text.