Y10T 117/1088
Including heating or cooling details
Official title: including heating or cooling details
Y10T117/1088 (Including heating or cooling details) appears on 202 US grants and 109 published applications in this corpus.
Search patents in Y10T- Granted patents
- 202
- Published applications
- 109
- Assignees
- 109
- Inventors
- 330
- Latest grant
- 11 Jun 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 3 | 0 |
| 1978 | 4 | 0 |
| 1979 | 1 | 0 |
| 1980 | 4 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 6 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 4 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 16 | 0 |
| 1999 | 17 | 0 |
| 2000 | 12 | 0 |
| 2001 | 5 | 2 |
| 2002 | 9 | 4 |
| 2003 | 5 | 16 |
| 2004 | 15 | 4 |
| 2005 | 5 | 5 |
| 2006 | 2 | 8 |
| 2007 | 9 | 15 |
| 2008 | 9 | 11 |
| 2009 | 5 | 4 |
| 2010 | 5 | 11 |
| 2011 | 4 | 4 |
| 2012 | 7 | 9 |
| 2013 | 9 | 5 |
| 2014 | 5 | 0 |
| 2015 | 5 | 2 |
| 2016 | 3 | 1 |
| 2017 | 0 | 3 |
| 2018 | 1 | 1 |
| 2019 | 1 | 1 |
| 2020 | 1 | 1 |
| 2021 | 0 | 1 |
| 2022 | 1 | 1 |
| 2023 | 1 | 0 |
| 2024 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Device for manufacturing monocrystalline silicon and cooling method thereof11 Jun 2024US 12,006,590 B2Jinko Solar Co., Ltd.
- Mono-crystalline silicon growth apparatus25 Jul 2023US 11,708,642 B2GlobalWafers Co., Ltd.
- Mono-crystalline silicon growth method5 Jul 2022US 11,377,752 B2GlobalWafers Co., Ltd.
- Float zone silicon wafer manufacturing system and related process20 Oct 2020US 10,811,245 B2Rayton Solar Inc.
- Method and apparatus for preparing an analytical sample by fusion20 Aug 2019US 10,386,279 B2Materiaux Nieka Inc.
- Device for manufacturing monocrystalline silicon and cooling method thereof8 Dec 2022US 2022/0389608 A1Jinko Solar Co., Ltd.
- Mono-crystalline silicon growth apparatus28 Oct 2021US 2021/0332496 A1GlobalWafers Co., Ltd.
- Mono-crystalline silicon growth method2 Jul 2020US 2020/0208296 A1GlobalWafers Co., Ltd.
- Single crystal ingots with reduced dislocation defects and methods for producing such ingots9 May 2019US 2019/0136407 A1
- Single crystal ingots with reduced dislocation defects and methods for producing such ingots12 Apr 2018US 2018/0100246 A1Corner Star Limited
Most cited
By later US patents
- Apparatus for forming refractory tubing71US 3,943,324 AArthur D. Little, Inc. · 1976
- Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same63US 5,968,264 AShin-Etsu Handotai Co., Ltd. · 1999
- Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance58US 6,045,610 ASamsung Electronics Co., Ltd. · 2000
- Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections33US 6,093,913 AMEMC Electronic Materials, Inc. · 2000
- Powder metallurgy tungsten crucible for aluminum nitride crystal growth32US 6,719,843 B2Crystal IS, Inc. · 2004