H10F 30/2837
Ccds having schottky gates
Official title: {CCDs having Schottky gates}
H10F30/2837 (Ccds having schottky gates) appears on 5 US grants and 2 published applications in this corpus.
Search patents in H10F- Granted patents
- 5
- Published applications
- 2
- Assignees
- 5
- Inventors
- 6
- Latest grant
- 14 Oct 2014
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Low noise hybridized detector using charge transfer14 Oct 2014US 8,860,083 B1Sensors Unlimited, Inc.
- Method of producing a solid state imaging device including using a metal oxide etching stopper10 Aug 2010US 7,772,017 B2FUJIFILM Corporation
- Solid-state imaging device and method for producing the same2 Sep 2008US 7,420,235 B2FUJIFILM Corporation
- Driving-gate charge-coupled device18 Jul 2000US 6,091,092 AThomson-CSF Semiconducteurs Specifiques
- Infrared Schottky junction charge coupled device19 Mar 1991US 5,001,530 AUnisearch Limited
Most cited
By later US patents
- Low noise hybridized detector using charge transfer42US 8,860,083 B1Sensors Unlimited, Inc. · 2014
- Infrared Schottky junction charge coupled device5US 5,001,530 AUnisearch Limited · 1991
- Solid-state imaging device and method for producing the same2US 7,420,235 B2FUJIFILM Corporation · 2008
- Method of producing a solid state imaging device including using a metal oxide etching stopper1US 7,772,017 B2FUJIFILM Corporation · 2010