Method of producing a solid state imaging device including using a metal oxide etching stopper

A method for producing a solid-state imaging device, the solid-state imaging device containing:

• a photoelectric conversion section;
• and a charge transfer section having a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, comprising in the following order:
• sequentially laminating a silicon oxide film and a metal oxide thin film on a semiconductor substrate;
• forming a first electrode comprising a first conductive film;
• forming a silicon oxide film on the top of the first electrode;
• anisotropically etching the silicon oxide film by using the metal oxide thin film as an etching stopper which is not etched by said anisotropic etching, to form a sidewall insulating film on the lateral wall of the first electrode and to remove said silicon oxide film from the top of the first electrode;
• and
• forming a second electrode comprising a second conductive film so as to be insulated and separated from the first electrode with intervention of the sidewall insulating film.