H01J 2329/4608
Gate electrodes
H01J2329/4608 (Gate electrodes) appears on 35 US grants and 37 published applications in this corpus.
Search patents in H01J- Granted patents
- 35
- Published applications
- 37
- Assignees
- 22
- Inventors
- 102
- Latest grant
- 30 May 2017
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 4 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 2 |
| 2003 | 0 | 0 |
| 2004 | 1 | 1 |
| 2005 | 1 | 0 |
| 2006 | 0 | 4 |
| 2007 | 1 | 1 |
| 2008 | 1 | 5 |
| 2009 | 2 | 6 |
| 2010 | 3 | 6 |
| 2011 | 8 | 4 |
| 2012 | 2 | 3 |
| 2013 | 4 | 2 |
| 2014 | 2 | 3 |
| 2015 | 3 | 0 |
| 2016 | 0 | 0 |
| 2017 | 1 | 0 |
By publication year. Applications have been published since 2001.
Subgroups
Granted patents
Recent patents
- Field emission electron source and field emission device30 May 2017US 9,666,400 B2Hon Hai Precision Industry Co., Ltd.
- Field emission device5 May 2015US 9,024,544 B2National University Corporation Sizuoka University
- Field emission device and field emission display having same7 Apr 2015US 9,000,662 B2Hon Hai Precision Industry Co., Ltd.
- Mesh electrode adhesion structure, electron emission device and electronic apparatus including the electron emission device20 Jan 2015US 8,938,049 B2Samsung Electronics Co., Ltd.
- Metal gate electrode and field emission display having same2 Dec 2014US 8,901,807 B2Hon Hai Precision Industry Co., Ltd.
- symmetric quadrupole structured field emission display without spacer24 Apr 2014US 2014/0111083 A1
- Field emission electron source and field emission device10 Apr 2014US 2014/0097741 A1Hon Hai Precision Industry Co., Ltd.
- Mesh electrode adhesion structure, electron emission device and electronic apparatus including the electron emission device9 Jan 2014US 2014/0010347 A1Samsung Electronics Co., Ltd.
- Field emission device and field emission display having same4 Apr 2013US 2013/0082588 A1Hon Hai Precision Industry Co., Ltd.
- Triode-structured field emission display with anode and gate on the same substrate31 Jan 2013US 2013/0026906 A1
Most cited
By later US patents
- Field emission displays with reduced light leakage9US 5,956,611 AMicron Technologies, Inc. · 1999
- Field emission cathode and field emission display employing with same6US 8,089,206 B2Hon Hai Precision Industry Co., Ltd. · 2012
- Matrix-type cold-cathode electron source device4US 8,384,281 B2Panasonic Corporation · 2013
- Field emission displays with reduced light leakage3US 6,228,667 B1Micron Technology, Inc. · 2001
- Image forming apparatus with reduced loss of electron source caused by the inert gas3US 7,733,003 B2Canon Kabushiki Kaisha · 2010