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US 5,956,611 AGranted
Field emission displays with reduced light leakage
AssigneeMicron Technologies, Inc.
InventorsDavid A. Cathey, Jr., John K. Lee, Tianhong Zhang, Behnam Moradi
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Abstract
Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
Claims6
A method for forming a semiconductor device comprising the steps of:
- forming a silicide;
- and
- exposing said silicide to a source of nitrogen at a temperature over 1000.degree. C. to resist silicide damage in an ensuing oxide etch.
Dependencies are inferred from the claim text.