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US 8,384,281 B2Granted
Matrix-type cold-cathode electron source device
AssigneePanasonic Corporation
InventorsMakoto Yamamoto, Keisuke Koga
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Abstract
A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).
Claims5
A matrix-type cold-cathode electron source device comprising:
- an emitter array that is formed on an emitter address electrode and contains a plurality of emitters for emitting electrons;
- and
- a gate electrode opposed to the emitter array,
- wherein the gate electrode comprises:
- an emitter area gate electrode opposed to the emitter array;
- a gate address electrode connecting the emitter area gate electrode to a gate signal wire;
- and
- a high-resistance area disposed between the gate address electrode and the emitter area gate electrode, and
- the matrix-type cold-cathode electron source device further comprises a shield electrode on the gate electrode via an insulating layer, the shield electrode being connected to the emitter area gate electrode.
6 more elements
Dependencies are inferred from the claim text.