H01F 10/135
Containing transition metals
Official title: {containing transition metals}
H01F10/135 (Containing transition metals) appears on 51 US grants and 14 published applications in this corpus.
Search patents in H01F- Granted patents
- 51
- Published applications
- 14
- Assignees
- 31
- Inventors
- 102
- Latest grant
- 7 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 6 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 1 | 0 |
| 2005 | 0 | 2 |
| 2006 | 0 | 1 |
| 2007 | 0 | 1 |
| 2008 | 2 | 0 |
| 2009 | 1 | 4 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
| 2013 | 2 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 1 | 1 |
| 2017 | 0 | 0 |
| 2018 | 1 | 0 |
| 2019 | 0 | 1 |
| 2020 | 1 | 1 |
| 2021 | 1 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
| 2024 | 0 | 1 |
| 2025 | 0 | 0 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Device and method for high speed metamagnetic resistive switching7 Jul 2026US 12,677,602 B1The Government of the United States as represented by the Director, National Security Agency
- Magnetostrictive film and electronic device17 Mar 2026US 12,580,114 B2TDK Corporation
- Top buffer layer for magnetic tunnel junction application4 Apr 2023US 11,621,393 B2APPLIED Materials.Inc.
- Top buffer layer for magnetic tunnel junction application16 Feb 2021US 10,923,652 B2APPLIED Materials.Inc.
- Tunnel magnetic resistance element and method for manufacturing same11 Feb 2020US 10,559,748 B2Konica Minolta, Inc.
- Magnetostrictive film and electronic device2 May 2024US 2024/0145146 A1TDK Corporation
- Top buffer layer for magnetic tunnel junction application22 Apr 2021US 2021/0119119 A1APPLIED Materials.Inc.
- Top buffer layer for magnetic tunnel junction application24 Dec 2020US 2020/0403152 A1APPLIED Materials.Inc.
- Tunnel magnetic resistance element and method for manufacturing same7 Feb 2019US 2019/0044058 A1Konica Minolta, Inc.
- Recording read heads with a multi-layer afm layer methods and apparatuses8 Sep 2016US 2016/0260447 A1Western Digital (Fremont), LLC
Most cited
By later US patents
- Soft magnetic alloy film and manufacturing method thereof, and magnetic head incorporating the same65US 6,132,892 AKabushiki Kaisha Toshiba · 2000
- Apparatus using amorphous magnetic compositions31US 3,965,463 AInternational Business Machines Corporation · 1976
- Beam addressable film using amorphous magnetic material28US 3,949,387 AInternational Business Machines Corporation · 1976
- Magnetooptic memory medium28US 4,467,383 ASharp Kabushiki Kaisha · 1984
- Magnetic transfer record film25US 4,126,494 AKokusai Denshin Denwa Kabushiki Kaisha · 1978