Magnetostrictive film and electronic device
AssigneeTDK Corporation
InventorsMutsuko Nakano, Yasuhisa Okano, Takao Noguchi, Wakako Okawa, Yoshitomo Tanaka
Life of this patent
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Abstract
A magnetostrictive film includes rich regions having a mesh pattern in a cross section perpendicular to a film thickness direction of the magnetostrictive film. The rich regions are richer in a specific element contributing to ferromagnetism than surroundings of the rich regions.
Claims11
A magnetostrictive film comprising rich regions having stripe-shapes in a longitudinal section parallel to a film thickness direction of the magnetostrictive film and having a mesh pattern in a cross section perpendicular to the film thickness direction of the magnetostrictive film, the rich regions being richer in a specific element contributing to ferromagnetism than surroundings of the rich regions, and
- comprising a poor region between the rich regions in the cross section, the poor region including the specific element but being poorer in the specific element than the rich regions and having a portion surrounded by the rich regions continuously or intermittently aligned with each other.
A magnetostrictive film comprising rich regions having stripe-shapes in a longitudinal section parallel to a film thickness direction of the magnetostrictive film and having a mesh pattern in a cross section perpendicular to the film thickness direction of the magnetostrictive film, the rich regions being richer in a specific element contributing to ferromagnetism than surroundings of the rich regions, wherein
- a region between the rich regions also includes the specific element,
- local maximums of a concentration of the specific element are observed along an imaginary straight line having a predetermined length in the cross section;
- and
- a distance between the local maximums next to each other falls within 3 to 15 nm, and wherein the local maximums of the concentration of the specific element comprise at least five local maximums within the imaginary straight line having a length of 60 nm.
Dependencies are inferred from the claim text.