Top buffer layer for magnetic tunnel junction application
AssigneeApplied Materials, Inc.
InventorsLin Xue, Chando Park, Chi Hong Ching, Jaesoo Ahn, Mahendra Pakala
Life of this patent
Estimating the term…
Abstract
Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.
Claims18
A method of forming a magnetic tunnel junction device structure, sequentially comprising:
- forming a junction structure on a substrate, wherein the junction structure comprises a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer;
- forming a dielectric capping layer on the junction structure;
- performing a cooling process on the substrate having the dielectric capping layer formed thereon;
- forming a metal capping layer disposed on the dielectric capping layer;
- forming a top buffer layer on the metal capping layer
- forming a lattice structure comprising the dielectric capping layer;
- and
- forming the metal capping layer as an amorphous structure.
A method of forming a magnetic tunnel junction device structure, sequentially comprising:
- forming a junction structure on a substrate, wherein the junction structure comprises a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer;
- forming a dielectric capping layer on the junction structure;
- performing a cooling process on the substrate having the dielectric capping layer formed thereon, the cooling process comprising controlling a substrate temperature to a range between −250° C. and −150° C.;
- forming a metal capping layer disposed on the dielectric capping layer;
- forming a top buffer layer on the metal capping layer
- forming a lattice structure comprising the dielectric capping layer;
- and
- forming the metal capping layer as an amorphous structure.
A method of forming a magnetic tunnel junction device structure, sequentially comprising:
- forming a junction structure on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer,
- forming a dielectric capping layer on the junction structure;
- performing a cooling process on the substrate having the dielectric capping layer formed thereon;
- forming a metal capping layer disposed on the dielectric capping layer;
- forming a top buffer layer on the metal capping layer
- forming a lattice structure comprising the dielectric capping layer;
- and
- forming the metal capping layer as an amorphous structure.
Dependencies are inferred from the claim text.