Renasas Technology Corp.
Tokyo, JP· latest recorded location
Renasas Technology Corp. is named on 3 US grants and 4 published applications in this corpus. Its most frequent classification is G01R (Measuring electric variables).
- Granted patents
- 3
- Published applications
- 4
- Inventors
- 10
- Granted in 2026 so far
- 0
- Most recent grant
- 18 Apr 2006
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 0 | 1 |
| 2004 | 2 | 1 |
| 2005 | 0 | 1 |
| 2006 | 1 | 0 |
By publication year.
Technology areas
Share of 7 documents
- G01RMeasuring electric variables3
- H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements2
- H04BTransmission2
- H10DInorganic electric semiconductor devices2
- H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by2
Recent patents
- Method of manufacturing a semiconductor integrated circuit device having a plurality of wiring layers and mask-pattern generation method18 Apr 2006US 7,030,030 B2
- Modulation semiconductor integrated circuit device and testing method for oscillation circuit4 May 2004US 6,731,101 B2
- Manufacturing method of semiconductor integrated circuit device16 Mar 2004US 6,708,319 B2
- Test apparatus for semiconductor devices built-in self-test function10 Nov 2005US 2005/0251714 A1
- Method of manufacturing a semiconductor integrated circuit device having a plurality of wiring layers and mask-pattern generation method13 May 2004US 2004/0092124 A1
- Modulation semiconductor integrated circuit device and testing method for oscillation circuit13 Mar 2003US 2003/0048099 A1
- Manufacturing method of semiconductor integrated circuit device13 Jun 2002US 2002/0072135 A1
Most cited
By later US patents
- Modulation semiconductor integrated circuit device and testing method for oscillation circuit8US 6,731,101 B22004
- Manufacturing method of semiconductor integrated circuit device5US 6,708,319 B22004
- Method of manufacturing a semiconductor integrated circuit device having a plurality of wiring layers and mask-pattern generation method1US 7,030,030 B22006