Heating apparatus with enhanced thermal uniformity and method for making thereof

An apparatus for supporting a substrate in a process chamber and regulating the surface temperature of the substrate, the apparatus comprising:

• a base support having a surface adapted to support the substrate;
• a cooling element disposed in the base support
• a heating element for heating the substrate to a temperature of at least 300° C.;
• at least one layer of thermal pyrolytic graphite material embedded in the base support, the thermal pyrolytic graphite (TPG) layer having a thermal conductivity of at least 1000 W/m° C. in a plane parallel to the substrate being supported;
• wherein the surface of the base support has a maximum temperature variation of 10° C. between a lowest point and a highest temperature point on the surface of the base support, and further wherein
• the base support for supporting the wafer substrate comprises a base metal substrate comprising at least one of copper, aluminum, and alloys thereof;
• the heating element is sandwiched between two dielectric layers for heating the substrate to a temperature of at least 300° C. and disposed on the metal base substrate,
• the at least a layer of thermal pyrolytic graphite is embedded in the metal base substrate, under the heating element and dielectric layers, and away from the wafer substrate.

An apparatus for supporting a substrate in a process chamber and regulating the surface temperature of the substrate, the apparatus comprising:

• (a) a base support having a surface adapted to support the substrate, the base support comprising at least one of copper, aluminum, and alloys thereof;
• (b) an element to regulate the temperature of the substrate chosen from (i) a heating element for heating the substrate to a temperature of at least 300° C., wherein the heating element is embedded in the base support, (ii) a cooling element disposed in the base support, or (iii) both (i) and (ii);
• at least one layer of thermal pyrolytic graphite material embedded in the base support, the thermal pyrolytic graphite (TPG) layer having a thermal conductivity of at least 1000 W/m° C. in a plane parallel to the substrate being supported;
• wherein the surface of the base support has a maximum temperature variation of 10° C. between a lowest point and a highest temperature point on the surface of the base support.