US 8,785,293 B2Granted

Adaptation of the lattice parameter of a layer of strained material

AssigneeSoitec

InventorsPascal Guenard, Frederic Dupont

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Abstract

The invention relates to a method of adapting the lattice parameter of a seed layer of a strained material, comprising the following successive steps: a) a structure is provided that has a seed layer of strained material, of lattice parameter A1, of nominal lattice parameter An and of thermal expansion coefficient CTE3, a low-viscosity layer and an intermediate substrate of thermal expansion coefficient CTE1; b) a heat treatment is applied so as to relax the seed layer of strained material; and c) the seed layer is transferred onto a support substrate of thermal expansion coefficient CTE5, the intermediate substrate and the support substrate being chosen so that A1<An and CTE1≦CTE3 and CTE5>CTE1 or A1>An and CTE1≧CTE3 and CTE5<CTE1.

Claims15

Dependent claims

A method of adapting a lattice parameter of a seed layer of a strained material, comprising:

providing a structure including:
a seed layer of strained material having a lattice parameter A1, a nominal lattice parameter An, and a thermal expansion coefficient CTE3;
a low viscosity layer;
and
an intermediate substrate having a thermal expansion coefficient CTE1;
applying a heat treatment to relax the seed layer of the strained material;
transferring the seed layer onto a support substrate having a thermal expansion coefficient CTE5;
and
selecting the intermediate substrate and the support substrate such that:
A1<An and CTE1≦CTE3 and CTE5>CTE1
or
A1>An and CTE1≧CTE3 and CTE5<CTE1;
and
epitaxially growing at least one epilayer having a lattice parameter A3 on the seed layer after the transferring of the seed layer onto the support substrate.

11 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/147,749Filed 15 Feb 2010
Priority: FR 09 0113512 Mar 2009
Published: US 2011/0294245 A11 Dec 2011
Granted: 22 Jul 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10P 90/1914
Preparing SOI wafers: using bonding
H10W 10/181
Isolation regions comprising dielectric materials: semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered
H10W
Generic packages, interconnections, connectors or other constructional details of devices covered by

Family

US 2011/0294245 A1Pre-grant publication · published 1 Dec 2011
US 8,785,293 B2This patent

From the US filing history. Foreign family members aren’t listed.

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