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US 8,772,857 B2Granted
Vertical memory devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsByeong-In Choe, Jae-Hoon Jang, Sun-Il Shim, Han-Soo Kim, Jin-Man Han
Life of this patent
Estimating the term…
Abstract
A vertical memory device includes a channel, a ground selection line (GSL), word lines and a string selection line (SSL). The channel extends in a first direction substantially perpendicular to a top surface of a substrate, and a thickness of the channel is different according to height. The GSL, the word lines and the SSL are sequentially formed on a sidewall of the channel in the first direction and spaced apart from each other.
Claims19
A vertical memory device, comprising:
- a channel extending in a first direction substantially perpendicular to a top surface of a substrate, a thickness of the channel varying according to height;
- at least one ground selection line (GSL), a plurality of word lines and at least one string selection line (SSL) spaced apart from each other on a sidewall of the channel in the first direction,
- the at least one GSL, the plurality of word lines, and the at least one SSL defining an opening through which the channel extends in the first direction,
- the opening having a width that does not vary substantially along the first direction,
- the channel including an outer surface that extends in the first direction from the at least one GSL to the at least one SSL,
- the outer surface of the channel having a perimeter that substantially does not vary according to height along the first direction;
- and
- a tunnel insulation layer pattern, a charge trapping layer pattern and a blocking layer pattern sequentially stacked in a second direction substantially perpendicular to the sidewall of the channel, the tunnel insulation layer pattern, the charge trapping layer pattern and the blocking layer pattern between the sidewall of the channel and each of the GSL, the word lines, and the SSL.
5 more elements
A method of manufacturing a vertical memory device, comprising:
- forming at least one ground selection line (GSL), a plurality of word lines and at least one string selection line (SSL) spaced apart in a first direction on a substrate,
- the at least one GSL, the plurality of word lines, and the at least one SSL defining an opening having a width that does not substantially vary along the first direction;
- forming a channel in the opening on the substrate, the channel having a thickness that varies according to a height,
- the channel extending in the first direction substantially perpendicular to the top surface of the substrate,
- the channel including an outer surface that extends in the first direction from the at least one GSL to the at least one SSL,
- the outer surface of the channel having a perimeter that substantially does not vary according to height along the first direction;
- and
- forming a tunnel insulation layer pattern, a charge trapping layer pattern, and a blocking layer pattern sequentially stacked in a second direction substantially perpendicular to the sidewall of the channel and each of the GSL, the plurality of word lines, and the SSL.
5 more elements
A vertical memory device, comprising:
- a ground selection line (GSL);
- a word line (WL) on the GSL;
- a string selection line (SSL) on the WL;
- a channel of varying thickness crossing the GSL, WL and SSL,
- the channel having an outer surface that extends in a first direction from the GSL to the SSL,
- the outer surface of the channel having a perimeter that substantially does not vary according to height along the first direction;
- and
- a tunnel insulation layer pattern, a charge trapping layer pattern and a blocking layer pattern sequentially stacked,
- the tunnel insulation layer pattern, the charge trapping layer pattern and the blocking layer pattern extending between a sidewall of the channel and each of the GSL, the plurality of word lines, and the SSL.
6 more elements
Dependencies are inferred from the claim text.