Manufacturing method of SOI substrate

A method for manufacturing an SOI substrate, comprising the steps of:

• forming an insulating layer on a surface of a semiconductor substrate;
• forming an embrittlement region in the semiconductor substrate by adding accelerated ions to the semiconductor substrate;
• performing plasma treatment on the semiconductor substrate, whereby Si—H bonds are reduced;
• bonding a base substrate to the semiconductor substrate with the insulating layer interposed therebetween;
• performing heat treatment on the semiconductor substrate;
• and
• forming a semiconductor layer over the base substrate with the insulating layer interposed therebetween by separating the base substrate from the semiconductor substrate at the embrittlement region,
• wherein the semiconductor substrate is kept at a temperature of lower than or equal to 200° C. during the addition of the ions, and
• wherein the semiconductor substrate is kept at a temperature of higher than or equal to 100° C. and lower than or equal to 400° C. during the plasma treatment.

A method for manufacturing an SOI substrate, comprising the steps of:

• forming an insulating layer on a surface of a semiconductor substrate;
• forming an embrittlement region in the semiconductor substrate by adding accelerated ions to the semiconductor substrate;
• performing plasma treatment on the semiconductor substrate, whereby Si—H bonds are reduced;
• bonding a base substrate to the semiconductor substrate with the insulating layer interposed therebetween;
• performing heat treatment on the semiconductor substrate;
• and
• forming a semiconductor layer over the base substrate with the insulating layer interposed therebetween by separating the base substrate from the semiconductor substrate at the embrittlement region,
• wherein the semiconductor substrate is kept at a temperature of lower than or equal to 200° C. during the addition of the ions,
• wherein the semiconductor substrate is kept at a temperature of higher than or equal to 100° C. and lower than or equal to 400° C. during the plasma treatment, and
• wherein the plasma treatment is performed so that when distribution of the Si—H bonds in the semiconductor substrate is measured by Fourier transform infrared spectroscopy, peaks of absorbance in a range greater than or equal to 1930 cm−1 and less than or equal to 2065 cm−1 in the semiconductor substrate after the plasma treatment are reduced from peaks of absorbance in the range in the semiconductor substrate before the plasma treatment.