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US 7,745,865 B2Granted
Devices and methods for preventing capacitor leakage
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorKuo-Chi Tu
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Abstract
Devices and methods for preventing capacitor leakage caused by sharp tip. The formation of sharp tip is avoided by a thicker bottom electrode which fully fills a micro-trench that induces formation of the sharp tip. Alternatively, formation of the sharp tip can be avoided by recessing the contact plug to substantially eliminate the micro-trench.
Claims4
A semiconductor device, comprising:
- a contact plug formed in a contact opening through a first insulating layer;
- an etch stop layer on the first insulating layer;
- a second insulating layer directly on the etch stop layer;
- a capacitor landing on the contact plug with an overlay shift, comprising a bottom electrode on the top and sidewall of the contact plug, a capacitor dielectric on the bottom electrode, and a top electrode on the capacitor dielectric;
- wherein the second insulating layer defines the height of the capacitor bottom electrode;
- wherein one corner of the top surface of the contact plug is covered by the capacitor;
- wherein the etch stop layer extends to other three corners of the contact plug not covered by the capacitor;
- and
- wherein the total thickness Z of the bottom electrode and the capacitor dielectric satisfies at least one of the conditions:
- Z≧Y or Z≧½X
- where X is the distance of the overlay shift, and Y is the height of the sidewall of the contact plug covered by the bottom electrode.
8 more elements
Dependencies are inferred from the claim text.