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US 7,745,312 B2Granted
Selective germanium deposition for pillar devices
AssigneeSanDisk 3D LLC
InventorsS. Brad Herner, Christopher J. Petti
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Abstract
A method of making a pillar device includes providing an insulating layer having an opening, and selectively depositing germanium or germanium rich silicon germanium semiconductor material into the opening to form the pillar device.
Claims33
A method of making a pillar device, comprising:
- providing an insulating layer having an opening, wherein titanium nitride, titanium tungsten or tungsten nitride is exposed in the opening in the insulating layer;
- and
- selectively depositing germanium or germanium rich silicon germanium semiconductor material into the opening to form the pillar device.
A method of making a pillar diode, comprising:
- forming a titanium nitride pattern over a substrate;
- and
- forming an insulating layer on the titanium nitride pattern;
- forming an opening in insulating layer to expose the titanium nitride pattern;
- forming a silicon seed layer in the opening on the titanium nitride pattern;
- selectively depositing a first conductivity type germanium or germanium rich silicon germanium semiconductor material on the silicon seed layer in the opening;
- selectively depositing intrinsic germanium or germanium rich silicon germanium semiconductor material on the first conductivity type germanium or germanium rich silicon germanium semiconductor material;
- and
- implanting second conductivity type dopant into an upper portion of the intrinsic first conductivity type germanium or germanium rich silicon germanium semiconductor material semiconductor material to form a p-i-n diode.
6 more elements
A method of making a pillar device, comprising:
- forming an insulating layer over a substrate;
- patterning the insulating layer to form an opening in the insulating layer;
- forming a titanium nitride, titanium tungsten or tungsten nitride pattern over the substrate, prior to the step of forming the insulating layer, wherein the titanium nitride, titanium tungsten or tungsten nitride pattern is exposed in the opening;
- and
- selectively depositing germanium or germanium rich silicon germanium semiconductor material into the opening to form the pillar device.
2 more elements
A method of making a pillar device, comprising:
- forming an insulating layer over a substrate;
- patterning the insulating layer to form an opening in the insulating layer and expose the substrate in the opening;
- selectively forming a titanium nitride, titanium tungsten, or tungsten nitride pattern in the opening, prior to a step of selectively depositing germanium or germanium rich silicon germanium semiconductor material;
- and
- selectively depositing the germanium or germanium rich silicon germanium semiconductor material into the opening to form the pillar device.
2 more elements
Dependencies are inferred from the claim text.