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US 7,745,300 B2Granted
Method for forming a capacitor in a semiconductor and a capacitor using the same
AssigneeDongbu Electronics Co., Ltd.
InventorSang Kwon Kim
Life of this patent
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Abstract
Disclosed is a capacitor and method for forming a capacitor in a semiconductor. The method includes the steps of: (a) forming a lower electrode pattern on a silicon semiconductor substrate; (b) etching a portion of the lower electrode pattern to a predetermined depth to form a step in the lower electrode pattern; (c) forming a dielectric layer and a upper electrode layer on an entire surface of the substrate including the lower electrode pattern; and (e) patterning the upper electrode layer and the dielectric layer to form a upper electrode pattern and a dielectric pattern.
Claims12
A method for forming a capacitor comprising:
- (a) depositing a lower electrode layer on a silicon semiconductor substrate, then patterning the lower electrode layer to form a lower electrode pattern on the silicon semiconductor substrate;
- (b) etching edges of the lower electrode pattern to a predetermined depth to form a step in a central region therein;
- (c) forming a dielectric layer and an upper electrode layer on an entire surface of the substrate, including the lower electrode pattern and the step;
- and
- (d) patterning the upper electrode layer and the dielectric layer to form an upper electrode pattern and a dielectric pattern.
2 more elements
Dependencies are inferred from the claim text.