Method of creating a predefined internal pressure within a cavity of a semiconductor device

A method of creating a predefined internal pressure within a cavity of a semiconductor device, the method comprising:

• providing the semiconductor device, the semiconductor device comprising a semiconductor oxide area which is continuously arranged between the cavity of the semiconductor device and an external surface of the semiconductor device;
• exposing the semiconductor device to an ambient atmosphere with a noble gas at a first temperature for a predetermined time period;
• and
• setting a second temperature, which is different from the first, after the predetermined time period has expired,
• the semiconductor oxide area exhibiting a higher permeability for the noble gas at the first temperature than at the second temperature,
• the step of exposing being performed such that the noble gas is neon.