Method in the manufacturing of a semiconductor device
AssigneeTelefonaktiebolaget LM Ericsson (publ)
InventorHans Norström
Life of this patent
Estimating the term…
Abstract
A selective etching method in the fabrication of a semiconductor device is provided. The method involves the steps of: depositing an amorphous layer of semiconductor material on a monocrystalline substrate of the same semiconductor material; depositing at least one dielectric layer on the amorphous layer such as to prevent crystallization of said amorphous layer; patterning the resultant structure and thereafter etching away the dielectric layer and the amorphous semiconductor layer within a predetermined area or region; and heat-treating the resulting structure.
Claims7
A selective etching method in the fabrication of a semiconductor device, comprising the steps of:
- depositing an amorphous layer of semiconductor material on a monocrystalline substrate of the same semiconductor material;
- depositing at least one dielectric layer on the amorphous layer such as to prevent crystallization of said amorphous layer;
- patterning the resultant structure and thereafter etching away the dielectric layer and the amorphous semiconductor layer within a predetermined area or region;
- and
- heat-treating the resulting structure.
Dependencies are inferred from the claim text.