Method for forming a copper layer over a semiconductor wafer

A method for forming a copper layer over a wafer, the method comprising the steps of:

• placing the wafer in an electroplating chamber, the electroplating chamber having a control system, wherein the control system is electrically coupled to the wafer through at least one electrical contact, and wherein the control system provides power to the wafer;
• positively pulsing power to the wafer during a first time period, wherein positively pulsing power has on periods at a first power level and off periods at a second power level;
• providing a first constant power to the wafer during a second time period following the first time period, wherein the first constant power has a third power level that is less than the first power level and greater than the second power level;
• and
• providing a second constant power to the wafer during a third time period following the second time period, wherein the second constant power has a fourth power level that is greater than the first power level.

A method for forming a copper layer over a wafer, the method comprising the steps of:

• placing the wafer in an electroplating chamber, the electroplating chamber having a control system, wherein the control system is electrically coupled to the wafer through at least one electrical contact, and wherein the control system provides power to the wafer;
• positively pulsing a first power to the wafer during a first time period, wherein positively pulsing the first power further comprises on time periods at a first power level and off periods at a second power level;
• negatively pulsing a second power to the wafer during a second time period that follows the first time period, wherein negatively pulsing a second power further comprises on time periods at a third power level and off time periods at a fourth power level;
• and
• positively pulsing a third power to the wafer during a third time period that follows the second time period, wherein positively pulsing the third power further comprises on time periods at a fifth power level and off time periods at a sixth power level wherein the fifth power level is less than the first power level.

A method for forming a copper layer over a wafer, the method comprising the steps of:

• placing the wafer in an electroplating chamber, wherein:
• the wafer has a dual inlaid interconnect opening with a top dielectric surface, a bottom trench surface positioned at a planar surface below the top dielectric surface, and a bottom via surface positioned at a planar surface below the bottom trench surface, and
• the electroplating chamber has a control system that is electrically coupled to the wafer through at least one electrical contact, and wherein the control system provides power to the wafer;
• positively pulsing power to the wafer for a first time period;
• negatively pulsing power to the wafer for a second time period following the first time period;
• and
• positively pulsing power to the wafer for a third time period following the second time period.

A method for forming a copper layer over a wafer, the method comprising the steps of:

• placing the wafer in an electroplating chamber, wherein the electroplating chamber has a control system that is electrically coupled to the wafer through at least one electrical contact, and wherein the control system provides power to the wafer;
• powering the wafer to electroplate copper onto the wafer;
• and
• monitoring an electrical property of the wafer during electroplating to determine when to change conditions in the electroplating chamber.

A method for forming a copper layer over a wafer, the method comprising the steps of:

• placing the wafer in an electroplating chamber, the electroplating chamber having an control system, wherein the control system is electrically coupled to the wafer and to an anode, and wherein the control system provides power to the wafer and the anode;
• positively powering the wafer to electroplate copper onto the wafer;
• and
• pulsing power to the anode to further control an electroplating of copper onto the wafer.