Precision analog metal-metal capacitor

A capacitor in a semiconductor device comprising:

• a first insulation layer over a semiconductor device, said first insulation layer having a planarized first metal layer positioned therein;
• a dielectric layer over a portion of said first metal layer;
• a second insulation layer over said first insulation layer, said first metal layer and said dielectric layer;
• and
• a second planarized metal layer wherein said second metal layer extends through said second insulation layer over said dielectric layer.

A capacitor in a semiconductor device, comprising:

• a semiconductor substrate;
• a planarized first insulation layer over said semiconductor substrate;
• a first metallization level over said first insulation layer;
• a second insulation layer positioned over said first insulation layer and said first metallization level, wherein the second insulation layer has a filled trench defined by an interior and wherein said filled trench comprises a dielectric layer positioned adjacent the interior of said trench and a planarized metal plate over said dielectric layer;
• a metal stud extending through said second insulation layer wherein said stud contacts said first metallization level;
• a second metallization layer over and in contact with said metal plate.

A capacitor in a semiconductor device comprising:

• a first planarized insulation layer over a semiconductor device and a patterned first metal layer positioned thereover;
• a dielectric layer over at least a portion of said first metal layer;
• a second metal layer having discrete first and second portions, wherein a first portion of said second metal layer is fully landed over said dielectric layer and said second portion of said second metal layer is in contact with said first metal layer;
• a second insulation layer over said first insulation layer, said dielectric layer and said second metal layer;
• discrete first and second metal studs extending through said second insulation layer wherein said first metal stud is over said first portion of said second metal layer and the second metal stud is over the second portion of said second metal layer.