US 5,705,429 A · Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius

Abstract

After forming a contact hole in an insulator layer, which is formed on a substrate covering an impurity doped region, a Ti film, a TiN film (or TiON film), and an Al alloy (for example, an alloy of Al--Si--Cu) layer are sputtered (consecutively from the bottom level) for forming a wiring material layer. A wiring layer is formed by patterning the wiring material layer in accordance with a wiring pattern. Portions with a 0% coverage of the Al alloy layer are eliminated by sputtering the Al alloy layer with a substrate temperature in a range between 100.degree.and 150.degree. C.

Claims26

Dependent claims

A method of manufacturing wiring, comprising the steps of:

forming on a substrate having a contact portion, an insulator layer, provided with a contact hole having a surface including a horizontal portion, a slope portion, and a vertical portion in alignment to said contact portion;
forming by sputtering a wiring material layer comprising a Ti film, a TiN, TiON or TiW film, and an Al alloy layer consecutively from a lower level, covering said contact hole and said insulator layer, wherein the entire thickness of said Al alloy layer is formed while said substrate is kept at a temperature in a range from 100.degree. to 150.degree. C.;
and
patterning the wiring material layer to form a wiring layer according to a wiring pattern.

1 more element

Dependencies are inferred from the claim text.

Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius

Life of this patent

Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius

Life of this patent

Abstract

Claims26