Programmable semiconductor antifuse structure and method of fabricating

The method of forming an electrical programmable read only memory cell having an antifuse structure comprising the steps of:

• growing a first insulating layer on a silicon substrate;
• depositing a first semiconductor layer on said first insulating layer;
• doping said first semiconductor layer to a predetermined conductivity;
• etching said first semiconductor layer;
• depositing a second insulating layer over said first semiconductor layer and said first insulating layer;
• etching said second insulating layer to form an opening which extends to and exposes a portion of said first semiconductor layer;
• forming a conductive layer over said first semiconductor layer;
• depositing a second semiconductor layer over said second insulating layer and said conductive layer;
• etching said second semiconductor layer, wherein said second semiconductor layer overlies said conductive layer and a portion of said second insulating layer;
• depositing a metal layer on said second semiconductor layer;
• and
• etching said metal layer to form a contact to said memory cell.