Turn-off high-power semiconductor component with low inductive housing

A turn-off high-power semiconductor component in the form of a GTO, comprising:

• a disk-shaped semiconductor substrate which is disposed concentrically in an annular insulating housing between a disk-shaped cathode contact on a cathode-contact side, to which pressure can be applied, and a disk-shaped anode contact on an anode-contact side, to which pressure can also be applied, and which is contacted on the cathode-contact side by a gate contact, the cathode and anode contacts being connected to the insulating housing via a first lid and second lid respectively, an outwardly hermetically sealed component being formed, and the gate contact being capable of being fed with a gate current via a gate lead brought to the outside, wherein
• (a) the gate contact and the gate lead are of annular design, the gate lead being brought out of the component and being electrically insulated from the cathode contact by a single insulator;
• (b) the cathode contact is subdivided into an inner contact disk and an outer contact ring which surrounds the inner contact disk concentrically at a distance;
• (c) the gate contact is disposed between the inner contact disk and the outer contact ring, the gate contact being isolated from the inner contact disk and the outer contact ring;
• and
• (d) the ate lead is brought out of the component between the inner contact disk and the outer contact ring, the gate lead being isolated from the inner contact disk and the outer contact ring by an insulating material.