Semiconductor structure and fabrication method thereof and semiconductor device

Abstract

Examples of the present disclosure provide a semiconductor structure and a fabrication method thereof and a semiconductor device, and relates to the field of semiconductor technology. The semiconductor structure includes a interposer layer and a bonding block that are stacked together. The bonding block includes a connection portion and a plurality of stacks, and the connection portion connects any two adjacent stacks. Any one of the stacks is bonded with the interposer layer. In the examples, the connection portion connects any two adjacent stacks, such that the plurality of stacks in the bonding block can be jointly bonded with the interposer layer, and there is no need to bond the plurality of stacks with the interposer layer separately, thereby improving production efficiency and unit per hour of the semiconductor structure and also improving convenience of bonding between the stacks and interposer layer, which facilitates miniaturization of the stacks.

Dependencies are inferred from the claim text.