Multi-gate total ionizing dose (tid) radiation-hardened device

A multi-gate total ionizing dose (TID) radiation-hardened device, comprising:

• a semiconductor substrate;
• wherein a plurality of Fin structures and a shallow trench isolation (STI) region are provided on the semiconductor substrate;
• the STI region is provided between adjacent two of the plurality of Fin structures;
• and a middle portion of a section of the STI region perpendicular to a source-drain direction is configured to be hollowed out;
• a surface of an upper part of each of the plurality of Fin structures not in contact with the STI region is provided with a gate structure across the plurality of Fin structures;
• and a region of the plurality of Fin structures in contact with the gate structure is configured as a channel region;
• and
• a lower part of each of the plurality of Fin structures is configured to be covered by the STI region;
• and a source and a drain are provided at two ends of the channel region, respectively.