Method for preparing a memory device

A method for preparing a memory device, comprising:

• forming an active region in a substrate, wherein the active region has a linear top view shape;
• forming a gate structure on the substrate, wherein the gate structure has a first linear portion intersected with a section of the active region away from end portions of the active region and a second linear portion substantially parallel to the first linear portion, wherein one of the end portions of the active region is deposited between the first linear portion and the second linear portion of the gate structure;
• forming a first insulating layer and a second insulating layer on the substrate, wherein the first insulating layer laterally surrounds the gate structure, and is covered by the second insulating layer;
• forming an opening penetrating through the first and second insulating layers and exposing a portion of the active region, wherein the opening is laterally spaced apart from the gate structure;
• and
• sequentially forming a dielectric layer and an electrode in the opening.