Vertical electrical fuse device and method for forming the same

A vertical e-fuse device, comprising:

• an annular fuse link disposed over a semiconductor base, wherein a material of the annular fuse link and a material of the semiconductor base are the same;
• a first bottom anode/cathode region surrounded by a bottom portion of the annular fuse link;
• a second bottom anode/cathode region surrounding the bottom portion of the annular fuse link;
• and
• a top anode/cathode region disposed over the annular fuse link.

A method for forming a vertical e-fuse device, comprising:

• forming a mask layer over a semiconductor substrate;
• etching the semiconductor substrate by using the mask layer as a mask to form a fuse link over a semiconductor base;
• epitaxially growing a first bottom anode/cathode region and a second bottom anode/cathode region over the semiconductor base and adjacent to a bottom portion of the fuse link, wherein the fuse link is between the first bottom anode/cathode region and the second anode/cathode region;
• and
• epitaxially growing a top anode/cathode region to replace the mask layer.