Method of manufacturing capacitor
AssigneeSumitomo Electric Device Innovations, Inc.
InventorsYoshihide KOMATSU, Takeshi IGARASHI, Hiroyuki OGURI
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Abstract
A method of manufacturing a capacitor having an MIM structure includes forming a dielectric by laminating it a plurality of times on an upper surface of a lower electrode, and forming an upper electrode on an upper surface of the dielectric. The forming of the dielectric includes forming the first dielectric layer on the upper surface of the lower electrode, cleaning an upper surface of the first dielectric layer by at least one of jet cleaning and dual fluid cleaning, and forming the second dielectric layer on an upper surface of the cleaned first dielectric layer.
Claims3
A method of manufacturing a capacitor having an MIM structure in which a lower electrode, a dielectric and an upper electrode are laminated, the method comprising:
- forming the dielectric by laminating it a plurality of times on an upper surface of the lower electrode;
- and
- forming the upper electrode on an upper surface of the dielectric,
- wherein the dielectric includes a first dielectric layer which is formed on an upper surface of the lower electrode, and a second dielectric layer which is formed on an upper surface of the first dielectric layer and is in contact with the upper electrode, and
- in the forming of the dielectric, at least one first dielectric layer is formed on the upper surface of the lower electrode, an upper surface of the first dielectric layer is cleaned by at least one of jet cleaning and dual fluid cleaning, and the second dielectric layer is formed on an upper surface of the cleaned first dielectric layer.
Dependencies are inferred from the claim text.