Chemical Mechanical Polishing (CMP) of Cobalt-Containing Substrate

A chemical mechanical polishing (CMP) system comprising:

• a semiconductor substrate having a surface containing a first material and at least one second material;
• wherein the first material is Co and the second material is selected from the group consisting of dielectric film, low-k and ultra low-k film, and barrier film;
• a polishing pad;
• a chemical mechanical polishing composition comprising
• 0.005 wt. % to 25 wt. % of an abrasive;
• 0.05 wt. % to 10 wt. % of at least two chelators;
• water;
• and
• at least one selected from the group consisting of:
• 0.0005 wt. % to 0.25 wt. % of a chemical additive as corrosion inhibitor or a defect reducing agent;
• 0.005 wt. % to 0.5 wt. % of a pH adjusting agent;
• 0.1 wt. % to 10 wt. % of an oxidizing agent;
• 0.0001 wt. % to 0.10 wt. % of biocide;
• and
• 0.0005 wt. % to 0.15 wt. % of a surfactant;
• wherein the chemical mechanical polishing (CMP) polishing composition having a pH from 3.5 to 8.5;
• and the at least two chelators are amino acids independently selected from the group consisting of DL-Alanine, D-Alanine, L-Alanine, Glycine, Serine, Proline, Histidine, Isoleucine, Lysine, Methionine, Phenylalanine, Threonine, Tryptophan, Valine, Asparagine, Aspartic acid, Glutamine, Ornithine, Selenocystein, Tyrosine, Sarcosine, Bicine, Tricine, Aceglutamide, N-Acetylaspartic acid, Acetylcarnitine, Acetylcysteine, N-Acetylglutamic acid, Acetylleucine, Acivicin, S-Adenosyl-L-homocysteine, Agaritine, Alanosine, Aminohippuric acid, L-Arginine ethyl ester, Aspartame, Aspartylglucosamine, Benzylmercapturic acid, Biocytin, Brivanib alaninate, Carbocisteine, N(6)-Carboxymethyllysine, Carglumic acid, Cilastatin, Citiolone, Coprine, Dibromotyrosine, Dihydroxyphenylglycine, Eflornithine, Fenclonine, 4-Fluoro-L-threonine, N-Formylmethionine, Gamma-L-Glutamyl-L-cysteine, 4-(γ-Glutamylamino)butanoic acid, Glutaurine, Glycocyamine, Hadacidin, Hepapressin, Lisinopril, Lymecycline, N-Methyl-D-aspartic acid, N-Methyl-L-glutamic acid, Milacemide, Nitrosoproline, Nocardicin A, Nopaline, Octopine, Ombrabulin, Opine, Orthanilic acid, Oxaceprol, Polylysine, Remacemide, Salicyluric acid, Silk amino acid, Stampidine, Tabtoxin, Tetrazolylglycine, Thiorphan, Thymectacin, Tiopronin, Tryptophan tryptophylquinone, Valaciclovir, Valganciclovir, and combinations thereof;
• wherein Co is a metal inter-connection material;
• and at least a portion of the surface is in contact with both the polishing pad and the chemical mechanical polishing composition.