Monolayer film mediated precision material etch
AssigneeTokyo Electron Limited
InventorsAlok Ranjan, Peter Ventzek
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Abstract
A method of etching is described. The method includes treating at least a portion of a surface exposed on a substrate with an adsorption-promoting agent to alter a functionality of the exposed surface and cause subsequent adsorption of a carbon-containing precursor, and thereafter, adsorbing the organic precursor to the functionalized surface to form a carbon-containing film. Then, at least a portion of the surface of the carbon-containing film is exposed to an ion flux to remove the adsorbed carbon-containing film and at least a portion of the material of the underlying substrate.
Claims11
A method of etching, comprising:
- treating at least a portion of a surface exposed on a substrate with an adsorption-promoting agent to alter a functionality of the exposed surface and cause subsequent adsorption of a carbon-containing precursor;
- thereafter, adsorbing the carbon-containing precursor to the functionalized surface to form a carbon-containing film;
- and
- exposing at least a portion of the surface of the carbon-containing film to an ion flux to remove the adsorbed carbon-containing film and at least a portion of the material of the underlying substrate.
Dependencies are inferred from the claim text.