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US 2017/0288011 A1Published application
High-density mim capacitors
AssigneeInternational Business Machines Corporation
InventorsBenjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. Deprospo, Huai Huang, Christopher J. Penny, Michael Rizzolo
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Abstract
Capacitors and methods of forming the same include forming a gap in a dielectric layer underneath one or more conducting lines, such that the one or more conducting lines are suspended over the gap. A capacitor stack is deposited in the gap and on the conducting lines. Respective contacts are deposited on the conducting lines and on the capacitor stack.
Claims20
A method for forming a capacitor, comprising:
- forming a gap in a dielectric layer underneath one or more conducting lines, such that the one or more conducting lines are suspended over the gap;
- depositing a capacitor stack directly on sidewalls of the gap and on the conducting lines;
- and
- forming respective contacts on the conducting lines and on the capacitor stack.
1 more element
A method for forming a capacitor, comprising:
- forming a gap in a dielectric layer underneath one or more conducting lines, such that the one or more conducting lines are suspended over the gap, comprising:
- damaging material in the dielectric layer in a capacitor region with a plasma process;
- and
- etching the damaged material with a wet etch;
- depositing a stack directly on sidewalls of the gap and on the conducting lines that comprises a first metallic layer in direct contact with all of the one or more conducting lines, an insulator layer, and a second metallic layer;
- depositing a passivating dielectric material in the gap after depositing the capacitor stack;
- and
- forming respective contacts on the conducting lines and on the capacitor stack.
5 more elements
A capacitor, comprising:
- one or more conducting lines formed over a gap in a dielectric layer;
- and
- a capacitor stack formed directly on sidewalls of the gap and on the one or more conducting lines wherein the stack on the surfaces of the gap is continuous with the stack formed on surfaces of the one or more conducting lines, wherein the capacitor stack comprises a first metallic layer, an insulator layer, and a second metallic layer, the first metallic layer being in direct contact with all of the one or more conducting lines.
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Dependencies are inferred from the claim text.