Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsAkihiro JONISHI, Hiroshi KANNO
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Abstract
A polysilicon resistor includes a high resistance conductor, a low resistance conductor adjacent to one end portion of the high resistance conductor, and a low resistance conductor adjacent to the other end portion of the high resistance conductor. Of the high resistance conductor, a width of a first place reacting most actively when a current flows into a polysilicon fuse is narrowest. Of the high resistance conductor, a width of a second place serving as an interface with each of the low resistance conductors is widest. The width of the high resistance conductor increases gradually from the first place toward the second place.
Claims8
A semiconductor device comprising:
- a substrate;
- an insulating film disposed on the substrate;
- a fuse disposed on the insulating film;
- and
- an oxide film disposed on the fuse, the fuse comprising a first resistor, a second resistor adjacent to a first end portion of the first resistor and having a lower resistance than the first resistor, and a third resistor adjacent to a second end portion of the first resistor and having a lower resistance than the first resistor,
- wherein a width of the first resistor decreases gradually from the first end potion and the second end portion toward a central portion of the first resistor.
Dependencies are inferred from the claim text.