Semiconductor device including substrate contact and related method

A method of forming a contact on a semiconductor device, the method comprising:

• forming a mask on the semiconductor device, the semiconductor device including a set of contact nodes and the mask exposing at least one contact node disposed within a trench in a substrate of the semiconductor device;
• performing a first substrate contact etch on the semiconductor device, the first substrate contact etch recessing the at least one exposed contact node within the trench;
• removing the mask from the semiconductor device;
• performing a second substrate contact etch on the semiconductor device, the second substrate contact etch recessing the set of contact nodes within the semiconductor device;
• removing a set of node films disposed above the set of contact nodes and on the sides of the trench;
• and
• forming a contact region within the trench above the contact nodes.

A method of forming a contact on a semiconductor device, the method comprising:

• masking regions of the semiconductor device other than a set of substrate contacts, the set of substrate contacts including a set of contact nodes disposed within a trench in a substrate of the semiconductor device;
• etching about the set of substrate contacts on the semiconductor device;
• removing a portion of the set of contact nodes from the trench;
• and
• forming a contact region within the trench above the set of contact nodes, the contact region substantially connected to the set of contact nodes and the substrate.