Gas-diffusion barriers for mems encapsulation
AssigneeSilicon Laboratories Inc.
InventorsRoger T. Howe, Emmanuel P. Quevy, Zhen Gu
Life of this patent
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Abstract
A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity. The barrier may be substantially impermeable to gas migration from the integrated circuit.
Claims23
A method comprising:
- forming an integrated circuit using a substrate;
- forming a barrier using the substrate;
- forming a microelectromechanical system (MEMS) device using the substrate;
- and
- encapsulating the MEMS device in a cavity,
- wherein the barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity.
An apparatus comprising:
- an integrated circuit formed using a substrate;
- a microelectromechanical system (MEMS) device formed using the substrate, the MEMS device being encapsulated in a cavity;
- and
- a barrier disposed between the integrated circuit and the cavity,
- wherein the barrier inhibits the integrated circuit from outgassing into the cavity.
An apparatus comprising:
- an integrated circuit formed using a substrate;
- a microelectromechanical system (MEMS) device formed using the substrate;
- and
- means for inhibiting outgassing from the integrated circuit into a cavity surrounding the MEMS device.
Dependencies are inferred from the claim text.