Method for fabricating a connection region in a semiconductor device
AssigneeSK hynix Inc.
InventorSang Soo LEE
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Abstract
Disclosed herein is a fabrication method of a semiconductor device to order to increase an operation liability of the semiconductor device. A method for fabricating a semiconductor device comprises forming a buried-type wordline in an active region defined on a SOI substrate, forming a silicon connection region for connecting an upper silicon layer to a lower silicon layer between neighboring buried type wordlines, and recovering the upper silicon layer on the silicon connection region.
Claims7
1-13. (canceled)
A semiconductor device, comprising:
- a buried-type wordline in an active region defined on a SOI substrate;
- a silicon connection region, located between neighboring buried type wordlines, configured to connect an upper silicon layer to a lower silicon layer which is separated from the upper silicon layer by a buried insulating layer of the SOI substrate;
- and
- a channel region configured to totally occupy a gap between the buried insulating layer and the buried-type wordline to reduce a leakage current.
The semiconductor device according to claim 11, wherein a depth of a bottom of the buried-type wordline is about 1000 Å to about 1300 Å and a thickness of the upper silicon layer is about 1400 Å to about 1600 Å.
The semiconductor device according to claim 11, wherein both the silicon connection region and the lower silicon layer include a substantially equivalent material.
Dependencies are inferred from the claim text.