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US 2010/0167429 A1Published application
Method of manufacturing semiconductor device
OwnerSeong-Hun Jeonginventor
Life of this patent
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Abstract
A method of manufacturing a semiconductor device estimates the level of erosion generated in CMP of a plug by using a monitoring pattern that defines uniformly a hole array size (split a) and the length (split b) of the space between arrays.
Claims20
A method of manufacturing a semiconductor device comprising:
- estimating a level of erosion generated in a chemical mechanical polishing of a plug using a monitoring pattern that uniformly defines a hole array size and a length of the space between arrays.
A method of manufacturing a semiconductor device comprising:
- forming a hole in a layer;
- filling the hole with a metal material;
- forming a plug by conducting a chemical mechanical polishing process on the metal material;
- and then estimating a level of erosion generated during the chemical mechanical polishing process.
1 more element
A method of manufacturing a semiconductor device comprising:
- forming a plug by conducting a chemical mechanical polishing process on a material comprising tungsten;
- estimating a level of erosion generated during the chemical mechanical polishing process by a monitoring process that uses a monitoring pattern that uniformly defines a hole array size and a length of the space between arrays.
Dependencies are inferred from the claim text.